SINGLE CRYSTAL COPPER, MANUFACTURING METHOD THEREOF AND SUBSTRATE COMPRISING THE SAME

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DC 欄位	值	語言
dc.contributor.author	CHEN Chih	en_US
dc.contributor.author	TU King-Ning	en_US
dc.contributor.author	LU Chia-Ling	en_US
dc.date.accessioned	2015-05-12T02:59:51Z	-
dc.date.available	2015-05-12T02:59:51Z	-
dc.date.issued	2015-03-05	en_US
dc.identifier.govdoc	C30B019/10	zh_TW
dc.identifier.govdoc	C30B029/02	zh_TW
dc.identifier.govdoc	C30B030/02	zh_TW
dc.identifier.govdoc	H05K001/11	zh_TW
dc.identifier.govdoc	C30B029/60	zh_TW
dc.identifier.govdoc	H01L023/48	zh_TW
dc.identifier.govdoc	H05K001/09	zh_TW
dc.identifier.govdoc	C22C009/00	zh_TW
dc.identifier.govdoc	C30B033/02	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/122865	-
dc.description.abstract	The present invention relates to a single crystal copper having [100] orientation and a volume of 0.1˜4.0×106 μm3. The present invention further provides a manufacturing method for the single crystal copper and a substrate comprising the same.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	SINGLE CRYSTAL COPPER, MANUFACTURING METHOD THEREOF AND SUBSTRATE COMPRISING THE SAME	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20150064496	zh_TW
顯示於類別：	專利資料

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