標題: | Low-Voltage InGaZnO Thin Film Transistors with Small Sub-Threshold Swing |
作者: | Cheng, C. H. Chou, K. I. Hsu, H. H. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | InGaZnO;Thin Film Transistor;LaAlO3;Sub-Threshold Swing |
公開日期: | 1-二月-2015 |
摘要: | We demonstrate a low-voltage driven, indium gallium zinc oxide thin-film transistor using high-kappa LaAlO3 gate dielectric. A low V-T of 0.42 V, very small sub-threshold swing of 68 mV/dec, field-effect mobility of 4.1 cm(2)Ns and low operation voltage of 1.4 V were reached simultaneously in LaAlO3/IGZO TFT device. This low-power and small SS TFT has the potential for fast switching speed and low power applications. |
URI: | http://dx.doi.org/10.1166/jnn.2015.9066 http://hdl.handle.net/11536/123849 |
ISSN: | 1533-4880 |
DOI: | 10.1166/jnn.2015.9066 |
期刊: | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY |
Volume: | 15 |
起始頁: | 1486 |
結束頁: | 1489 |
顯示於類別: | 期刊論文 |