標題: Low-Voltage InGaZnO Thin Film Transistors with Small Sub-Threshold Swing
作者: Cheng, C. H.
Chou, K. I.
Hsu, H. H.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: InGaZnO;Thin Film Transistor;LaAlO3;Sub-Threshold Swing
公開日期: 1-二月-2015
摘要: We demonstrate a low-voltage driven, indium gallium zinc oxide thin-film transistor using high-kappa LaAlO3 gate dielectric. A low V-T of 0.42 V, very small sub-threshold swing of 68 mV/dec, field-effect mobility of 4.1 cm(2)Ns and low operation voltage of 1.4 V were reached simultaneously in LaAlO3/IGZO TFT device. This low-power and small SS TFT has the potential for fast switching speed and low power applications.
URI: http://dx.doi.org/10.1166/jnn.2015.9066
http://hdl.handle.net/11536/123849
ISSN: 1533-4880
DOI: 10.1166/jnn.2015.9066
期刊: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 15
起始頁: 1486
結束頁: 1489
顯示於類別:期刊論文