Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy

Title:	Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy
Authors:	Lin, Shih-Wei Wu, Yue-Han Chang, Li Liang, Chi-Te Lin, Sheng-Di 材料科學與工程學系電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics
Keywords:	Weak anti-localization;Ultrathin metal films;Pure electron-electron dephasing
Issue Date:	18-Feb-2015
Abstract:	We have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy. This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy. The weak anti-localization effect is observed in the temperature range of 1.4 to 10 K with this sample, and it reveals that, for the first time, the dephasing is purely caused by electron-electron inelastic scattering in aluminum.
URI:	http://dx.doi.org/10.1186/s11671-015-0782-x http://hdl.handle.net/11536/124320
ISSN:	1556-276X
DOI:	10.1186/s11671-015-0782-x
Journal:	NANOSCALE RESEARCH LETTERS
Volume:	10
Begin Page:	0
End Page:	0
Appears in Collections:	Articles

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