標題: Long-Wavelength In-Plane Gate InAs Quantum-Dot Phototransistors
作者: Chen, Hsuan-An
Shih, Tung-Chuan
Lin, Shih-Yen
光電工程學系
Department of Photonics
關鍵字: In-plane gate transistors;InAs quantum dots
公開日期: 1-Feb-2015
摘要: In-plane gate transistors with and without an InAs quantum-dot (QD) absorption layer are investigated. The n-GaAs channel acts as both an absorption layer for incident light with energy higher than the GaAs bandgap and the transport path for the photocurrents. The insertion of InAs QD layer not only extends the absorption wavelength to 1.26 mu m, but also enhances the optical response from GaAs.
URI: http://dx.doi.org/10.1109/LPT.2014.2367515
http://hdl.handle.net/11536/124359
ISSN: 1041-1135
DOI: 10.1109/LPT.2014.2367515
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 27
起始頁: 261
結束頁: 263
Appears in Collections:Articles