標題: Device Characteristics of TSV-Based Piezoelectric Resonator With Load Capacitance and Static Capacitance Modification
作者: Shih, Jian-Yu
Chen, Yen-Chi
Chiu, Chih-Hung
Lo, Chung-Lun
Chang, Chi-Chung
Chen, Kuan-Neng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: 3-D integration;piezoelectric resonator device;through-silicon via (TSV)
公開日期: 1-三月-2015
摘要: The piezoelectric resonator device based on 3-D integration technologies and hermetic sealing bonding is presented with conventional semiconductor process. To pursue small form factor, high-performance, and cost-effective technologies, this through-silicon via (TSV)-based resonator is fabricated by CuSn eutectic bonding for hermeticity, wafer-level thinning, and Cu TSVs interconnection, while high-temperature cofired ceramic (HTCC) with metal lid is applied in the conventional resonator devices. The device characteristics and reliability of TSV-based resonator reveal it has great performance and outstanding quality. In addition, the device characteristics with load capacitance and its improvement through modification of the isolation in TSV-based substrate are discussed in this research. Demonstrations of these characteristics show that the TSV-based resonator possesses advantages and compatibility with current semiconductor process, as well as the manufacturability compared with the conventional metal lid with HTCC enclosures.
URI: http://dx.doi.org/10.1109/TED.2014.2387231
http://hdl.handle.net/11536/124564
ISSN: 0018-9383
DOI: 10.1109/TED.2014.2387231
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 62
起始頁: 927
結束頁: 933
顯示於類別:期刊論文