標題: Deep ultraviolet laser direct write for patterning sol-gel InGaZnO semiconducting micro/nanowires and improving field-effect mobility
作者: Lin, Hung-Cheng
Stehlin, Fabrice
Soppera, Olivier
Zan, Hsiao-Wen
Li, Chang-Hung
Wieder, Fernand
Ponche, Arnaud
Berling, Dominique
Yeh, Bo-Hung
Wang, Kuan-Hsun
光電工程學系
光電工程研究所
Department of Photonics
Institute of EO Enginerring
公開日期: 27-May-2015
摘要: Deep-UV (DUV) laser was used to directly write indium-gallium-zinc-oxide (IGZO) precursor solution and form micro and nanoscale patterns. The directional DUV laser beam avoids the substrate heating and suppresses the diffraction effect. A IGZO precursor solution was also developed to fulfill the requirements for direct photopatterning and for achieving semi-conducting properties with thermal annealing at moderate temperature. The DUV-induced crosslinking of the starting material allows direct write of semi-conducting channels in thin-film transistors but also it improves the field-effect mobility and surface roughness. Material analysis has been carried out by XPS, FTIR, spectroscopic ellipsometry and AFM and the effect of DUV on the final material structure is discussed. The DUV irradiation step results in photolysis and a partial condensation of the inorganic network that freezes the sol-gel layer in a homogeneous distribution, lowering possibilities of thermally induced reorganization at the atomic scale. Laser irradiation allows high-resolution photopatterning and high-enough field-effect mobility, which enables the easy fabrication of oxide nanowires for applications in solar cell, display, flexible electronics, and biomedical sensors.
URI: http://dx.doi.org/10.1038/srep10490
http://hdl.handle.net/11536/124802
ISSN: 2045-2322
DOI: 10.1038/srep10490
期刊: SCIENTIFIC REPORTS
Volume: 5
起始頁: 0
結束頁: 0
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