標題: Quantum Well InAs/AlSb/GaSb Vertical Tunnel FET With HSQ Mechanical Support
作者: Zeng, Yuping
Kuo, Chien-I
Hsu, Chingyi
Najmzadeh, Mohammad
Sachid, Angada
Kapadia, Rehan
Yeung, Chunwing
Chang, Edward
Hu, Chenming
Javey, Ali
交大名義發表
National Chiao Tung University
關鍵字: Heterojunction;nanofabrication;TCAD simulation;tunneling barrier;type III (broken gap) band alignment;vertical in-line tunnel FET
公開日期: 1-May-2015
摘要: A type-III (broken gap) band alignment heterojunction vertical in-line InAs/AlSb/GaSb tunnel FET, including a 2-nm-thin AlSb tunneling barrier is demonstrated. The impact of overlap and underlap gate is studied experimentally and supported further by quasi-stationary 2-D TCAD Sentaurus device simulations. Hydrogen silsesquioxane is used as a novel mechanical support structure to suspend the 10-nm-thin InAs drain with enough undercut to be able to demonstrate an overlap gate architecture. The overlap gate InAs/AlSb/GaSb TFET shows an ON current density of 22 mu A/mu m(2) at V-GS = V-DS = 0.4 V and the subthreshold slope is 194 mV/decade at room temperature and 46 mV/decade at 100 K.
URI: http://dx.doi.org/10.1109/TNANO.2015.2419232
http://hdl.handle.net/11536/124841
ISSN: 1536-125X
DOI: 10.1109/TNANO.2015.2419232
期刊: IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume: 14
起始頁: 580
結束頁: 584
Appears in Collections:Articles