標題: Formation of silicon germanium nitride layer with distributed charge storage elements
作者: Tu, CH
Chang, TC
Liu, PT
Liu, HC
Chen, WR
Tsai, CC
Chang, LT
Chang, CY
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
公開日期: 13-Mar-2006
摘要: The formation of silicon germanium nitride (SiGeN) with distributed charge storage elements is proposed in this work. A large memory window is observed due to the retainable dangling bonds inside the SiGeN gate stack layer. The nonvolatile memory device with the high-temperature oxidized SiGeN stack layer exhibits 2 V threshold voltage shift under 7 V write operation, which is sufficient for a memory device to define the signal "0" and "1." Also, the manufacture technology using the sequent high-temperature oxidation of the a-Si layer acting as the blocking oxide is proposed to enhance the performance of nonvolatile memory devices. (c) 2006 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2178868
http://hdl.handle.net/11536/12491
ISSN: 0003-6951
DOI: 10.1063/1.2178868
期刊: APPLIED PHYSICS LETTERS
Volume: 88
Issue: 11
結束頁: 
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