| 標題: | On Characteristic Variability of 16-nm-Gate Bulk FinFET Devices Induced by Intrinsic Parameter Fluctuation and Process Variation Effect |
| 作者: | Chen, Chieh-Yang Li, Yiming Chen, Yu-Yu Chang, Han-Tung Hsu, Sheng-Chia Huang, Wen-Tsung Yang, Chin-Min Chen, Li-Wen 資訊工程學系 Department of Computer Science |
| 公開日期: | 1-Jan-2013 |
| 摘要: | |
| URI: | http://hdl.handle.net/11536/124975 |
| ISBN: | 978-1-4799-0811-0; 978-1-4799-0812-7 |
| ISSN: | 1548-3770 |
| 期刊: | 2013 71ST ANNUAL DEVICE RESEARCH CONFERENCE (DRC) |
| 起始頁: | 137 |
| 結束頁: | 138 |
| Appears in Collections: | Conferences Paper |
- Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants / Huang, Wen-Tsung;Li, Yiming
- 具梯形通道塊材鰭式場效應電晶體元件及其電路特性擾動之研究 / 黃文聰;Huang, Wen-Tsung;李義明;Li, Yiming
- Process- and Random-Dopant-Induced Characteristic Variability of SRAM with nano-CMOS and Bulk FinFET Devices / Li, Tien-Yeh;Hwang, Chih-Hong;Li, Yiming
- A Systematic Approach to Correlation Analysis of In-Line Process Parameters for Process Variation Effect on Electrical Characteristic of 16-nm HKMG Bulk FinFET Devices / Su, Ping-Hsun;Li, Yiming
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