標題: IMPROVEMENT OF RESISTIVE SWITCHING PROPERTIES OF Ti/ZrO2/Pt WITH EMBEDDED GERMANIUM
作者: Lin, Chun-An
Panda, Debashis
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-2014
摘要: In this study, we construct the Ti/ZrO2/Ge(5nm)/ZrO2/Pt structures with various positions of embedded Ge in ZrO2 films. After depositing a Ge layer, a 600 degrees C rapid thermal annealing is carried out. Compared to other Ge positions, the lowest forming voltage and the most stable resistive behavior are observed in the cell with a Ge layer near the top electrode. The curve fitting of high resistance state and low resistance state shows that Schottky emission in reset process and the ionic conduction during set process. The improved switching properties could be related to the formation of Gerrnanium oxide and the defect concentration reduction after annealing process.
URI: http://hdl.handle.net/11536/125007
ISBN: 978-1-118-77140-2; 978-1-118-77127-3
ISSN: 1042-1122
期刊: ADVANCES IN MULTIFUNCTIONAL MATERIALS AND SYSTEMS II
Volume: 245
起始頁: 111
結束頁: 116
顯示於類別:會議論文