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dc.contributor.authorChen, Mei-Weien_US
dc.contributor.authorChang, Ming-Hungen_US
dc.contributor.authorWu, Pei-Chenen_US
dc.contributor.authorKuo, Yi-Pingen_US
dc.contributor.authorYang, Chun-Linen_US
dc.contributor.authorChu, Yuan-Huaen_US
dc.contributor.authorHwang, Weien_US
dc.date.accessioned2015-07-21T08:31:00Z-
dc.date.available2015-07-21T08:31:00Z-
dc.date.issued2013-01-01en_US
dc.identifier.isbn978-1-4799-1166-0en_US
dc.identifier.issn2164-1676en_US
dc.identifier.urihttp://hdl.handle.net/11536/125065-
dc.description.abstractIn a multiple supply voltage system, the level converters are inserted between two different voltage domains. However, those level converters may cause the propagation delays and power consumption. In order to eliminate the overhead of level conversion, a dual-edged triggered explicitpulsed level converting flip-flop (DETEP-LCFF) with a wide operation range is proposed. It is composed of a clock pulse generator and a modified differential cascode voltage switch with pass gate (DCVSPG) latch. The clock pulse generator has the symmetric pulse triggering time and holding period helping shorten the D-Q delay. By employed diode-connected PMOS transistors and two NMOS transistor stacked below the diode PMOS transistors, the proposed DETEP-LCFF can be operated from near-threshold region to superthreshold region. It is implemented in TSMC 65nm CMOS technology. It functions correctly across all process corners with a wide input voltage range, from 400mV to 1V. The proposed LCFF has a minimum D-Q delay of 781 ps, a setup time of 610ps, and a power dissipation of 2.3 mu W when the input voltage is OAV.en_US
dc.language.isoen_USen_US
dc.titleA DUAL-EDGED TRIGGERED EXPLICIT-PULSED LEVEL CONVERTING FLIP-FLOP WITH A WIDE OPERATION RANGEen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 IEEE 26TH INTERNATIONAL SOC CONFERENCE (SOCC)en_US
dc.citation.spage92en_US
dc.citation.epage97en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000351736000012en_US
dc.citation.woscount0en_US
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