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dc.contributor.authorWang, CCen_US
dc.contributor.authorChen, MCen_US
dc.date.accessioned2014-12-08T15:17:19Z-
dc.date.available2014-12-08T15:17:19Z-
dc.date.issued2006-03-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.45.1582en_US
dc.identifier.urihttp://hdl.handle.net/11536/12593-
dc.description.abstractNiSi-silicided n(+)p shallow junctions are fabricated by P+/F+ dual implantation into/through a thin NiSi silicide layer followed by low-temperature furnace annealing. The incorporation of fluorine atoms in the 61-nm-thick NiSi film retards film agglomeration, making the film stable up to 750 degrees C for 90 min. A forward ideality factor of 1.08 and a reverse bias current density (at 5 V) of 0.7 nA/cm(2) can be attained for the NiSi (61 nm)/n(+)p junctions with an area of 580 x 580 mu m(2) fabricated by P+/F+ dual implantation at 35/30 keV to a close of 5 x 10(15) 15 x 10(15) cm(-2) followed by 750 degrees C thermal annealing. The junction formed is about 71 nm from the NiSi/Si interface. Activation energy measurement shows that the reverse bias area current of the NiSi/n(+)p junctions is dominated by the diffusion current, while their reverse bias peripheral Current is dominated by the minority generation Current at room temperature. This implies the presence of generation centers in and/or close to the junction region along the perimeter.en_US
dc.language.isoen_USen_US
dc.subjectNiSien_US
dc.subjectsilicideen_US
dc.subjectn(+)p shallow junctionen_US
dc.subjectthermal stabilityen_US
dc.subjectagglomerationen_US
dc.titleFormation and characterization of NiSi-silicided n(+)p shallow junctionsen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.45.1582en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume45en_US
dc.citation.issue3Aen_US
dc.citation.spage1582en_US
dc.citation.epage1587en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000236191900021-
dc.citation.woscount3-
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