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dc.contributor.authorKer, MDen_US
dc.contributor.authorLin, KHen_US
dc.date.accessioned2014-12-08T15:17:27Z-
dc.date.available2014-12-08T15:17:27Z-
dc.date.issued2006-02-01en_US
dc.identifier.issn1057-7122en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TCSI.2005.856040en_US
dc.identifier.urihttp://hdl.handle.net/11536/12651-
dc.description.abstractElectrostatic discharge (ESD) protection design for mixed-voltage I/O interfaces has been one of the key challenges of system-on-a-chip (SOC) implementation in nano-scale CMOS processes. The on-chip ESD protection circuit for mixed-voltage I/O interfaces should meet the gate-oxide reliability constraints and prevent the undesired leakage current paths. This paper presents an overview on the design concept and circuit implementations of the ESD protection designs for mixed-voltage I/O interfaces without using the additional thick gate-oxide process. The ESD design constraints in mixed-voltage I/O interfaces, the classification and analysis of ESD protection designs for mixed-voltage I/O interfaces, and the designs of high-voltage-tolerant power-rail ESD clamp circuit are presented and discussed.en_US
dc.language.isoen_USen_US
dc.subjectelectrostatic discharge (ESD)en_US
dc.subjectESD protection designen_US
dc.subjectgate-oxide reliabilityen_US
dc.subjecthigh-voltage toleranten_US
dc.subjectmixed-voltage I/O interfacesen_US
dc.subjectpower-rail ESD clamp circuiten_US
dc.titleOverview on electrostatic discharge protection designs for mixed-voltage I/O interfaces: Design concept and circuit implementationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TCSI.2005.856040en_US
dc.identifier.journalIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERSen_US
dc.citation.volume53en_US
dc.citation.issue2en_US
dc.citation.spage235en_US
dc.citation.epage246en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000235403400002-
dc.citation.woscount18-
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