High work function IrxSi gates on HfAlON p-MOSFETs

doi:10.1109/LED.2005.862687

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wu, CH	en_US
dc.contributor.author	Yu, DS	en_US
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Wang, SJ	en_US
dc.contributor.author	Li, MF	en_US
dc.contributor.author	Zhu, C	en_US
dc.contributor.author	Hung, BE	en_US
dc.contributor.author	McAlister, SP	en_US
dc.date.accessioned	2014-12-08T15:17:29Z	-
dc.date.available	2014-12-08T15:17:29Z	-
dc.date.issued	2006-02-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2005.862687	en_US
dc.identifier.uri	http://hdl.handle.net/11536/12669	-
dc.description.abstract	We have fabricated the fully silicided IrxSi-gated p-MOSFETs on HfAlON gate dielectric with 1.7-mn equivalent oxide thickness. After 950 degrees C rapid thermal annealing, the fully IrxSi/HfAlON device has high effective work function of 4.9 eV, high peak hole mobility of 80 cm(2)/V.s, and the advantage of being process compatible to the current VLSI fabrication line.	en_US
dc.language.iso	en_US	en_US
dc.subject	HfAlON	en_US
dc.subject	IrSi	en_US
dc.subject	MOSFET	en_US
dc.title	High work function IrxSi gates on HfAlON p-MOSFETs	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2005.862687	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	27	en_US
dc.citation.issue	2	en_US
dc.citation.spage	90	en_US
dc.citation.epage	92	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000234850400004	-
dc.citation.woscount	17	-
顯示於類別：	期刊論文

文件中的檔案：

000234850400004.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。