完整後設資料紀錄
DC 欄位語言
dc.contributor.author劉介剛en_US
dc.contributor.authorJie-Kang Liouen_US
dc.contributor.author鍾世忠en_US
dc.contributor.authorChung, Shyh-Jongen_US
dc.date.accessioned2015-11-26T00:56:50Z-
dc.date.available2015-11-26T00:56:50Z-
dc.date.issued2015en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT070260281en_US
dc.identifier.urihttp://hdl.handle.net/11536/126719-
dc.description.abstract在本篇論文中,設計兩個電路應用於77GHz車用雷達系統。第一個電路為無接觸式晶片至電路板轉接設計,第二個電路是使用TN90GUTM CMOS製程,設計一個主動式晶片,晶片中包含一個低雜訊放大器(Low Noise Amplifier, LNA)與一個的共振器(Resonator)轉接電路(Transition)。 無接觸式晶片至電路板轉接設計是利用共振器與濾波器的原理,在晶片與印刷電路板(Printed Circuit Board, PCB)上設計半波長共振器,再透過兩共振器之耦合機制,將訊號由晶片傳輸至PCB,形成低損耗且無接觸的轉接電路。由於設計電路同時亦需要將實際量測環境納入考量,因此本論文中將進一步探討轉接電路之高頻量測方式以及其容忍度,進而歸納出各種高頻量測之方法與優劣。 而主動式晶片中,主要為整合一低雜訊功率放大器(LNA)與一共振耦合器,並透過與基板上之共振器耦合效應,直接將基板共振器中之能量有效地饋入到晶片上再透過晶片中LNA來驗證第一個轉接電路之可行性。低雜訊功率放大器(LNA)由串接(cascode)二級共源極電感性退化架構(Source Inductive Degeneration)來實現,此架構可具有高增益、低雜訊指數及良好的隔離度。zh_TW
dc.description.abstractIn this thesis, two circuits are designed for 77GHz automotive radar system; one is a novel contactless transition of the chip to the printed circuit board and the other is an integration of low noise amplifier (LNA) and resonator in TN90GUTM CMOS technology. LNA is used as the validation of the first transition. The contactless transition of the chip to the printed circuit board is designed. With the theory of the resonator and filter, half-wavelength resonators are designed on the chip and printed circuit broad (PCB), and then the signal on the chip can be transmitted to the PCB via a low loss coupling mechanism. In addition, I consider the high frequency measurement, tolerance, measurement environment and implement results, and then summarize various methods of high-frequency measurement. The other circuit is a low noise amplifier (LNA) integrated with a coupled resonator on the chip. A low noise amplifier is using inductive degeneration architecture in cascade. This architecture provides the high gain, low noise figure and good isolation.en_US
dc.language.isozh_TWen_US
dc.subject共振器zh_TW
dc.subjectW-bandzh_TW
dc.subject高頻量測zh_TW
dc.subject毫米波zh_TW
dc.subjectCMOSzh_TW
dc.subject低雜訊放大器zh_TW
dc.subjectResnatoren_US
dc.subjectW-banden_US
dc.subjectRF measurementen_US
dc.subjectMillimeter waveen_US
dc.subjectCMOSen_US
dc.subjectLNAen_US
dc.title毫米波無接觸式主動晶片至基板轉接設計與量測zh_TW
dc.titleDesign and Measurement of Millimeter-Wave Contactless Transition between Active Chip and Printed-Circuit Boarden_US
dc.typeThesisen_US
dc.contributor.department電信工程研究所zh_TW
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