0.18微米製程之低導通電阻700伏特橫向雙擴散場效電晶體設計

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	郭明奇	en_US
dc.contributor.author	Kuo, Ming-Chi	en_US
dc.contributor.author	趙昌博	en_US
dc.contributor.author	Chao, Chang-Po	en_US
dc.date.accessioned	2015-11-26T00:56:53Z	-
dc.date.available	2015-11-26T00:56:53Z	-
dc.date.issued	2015	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#GT079867516	en_US
dc.identifier.uri	http://hdl.handle.net/11536/126751	-
dc.language.iso	zh_TW	en_US
dc.subject	橫向雙擴散金氧半場效電晶體	zh_TW
dc.subject	LDMOS	en_US
dc.title	0.18微米製程之低導通電阻700伏特橫向雙擴散場效電晶體設計	zh_TW
dc.title	Design of 700V LDMOSFET with Low Rds(on) in 0.18um Technology	en_US
dc.type	Thesis	en_US
dc.contributor.department	電機學院電機與控制學程	zh_TW
顯示於類別：	畢業論文