標題: | New Layout Arrangement to Improve ESD Robustness of Large-Array High-Voltage nLDMOS |
作者: | Chen, Wen-Yi Ker, Ming-Dou 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Electrostatic discharge (ESD);lateral DMOS (LDMOS);open drain |
公開日期: | 1-二月-2010 |
摘要: | In high-voltage applications, large-array n-channel lateral DMOS (LA-nLDMOS) is usually required to provide high driving capability. However, without following the foundry-suggested electrostatic discharge (ESD) design guidelines in order to reduce total layout area, LA-nLDMOS is easily damaged once the parasitic bipolar junction transistor is triggered under ESD stresses. Accordingly, the bipolar triggering of LA-nLDMOS usually limits the ESD robustness of LA-nLDMOS, particularly in the open-drain structure. In this letter, a new layout arrangement for LA-nLDMOS has been proposed to suppress the bipolar triggering under ESD stresses. Measurement results in a 0.5-mu m 16-V bipolar CMOS DMOS process have confirmed that the new proposed layout arrangement can successfully increase the human-body-model ESD level of the LA-nLDMOS with effective width of 3000 mu m from the original 0.75 kV up to 2.75 kV. |
URI: | http://dx.doi.org/10.1109/LED.2009.2037343 http://hdl.handle.net/11536/5939 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2009.2037343 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 31 |
Issue: | 2 |
起始頁: | 159 |
結束頁: | 161 |
顯示於類別: | 期刊論文 |