High-Voltage nLDMOS in Waffle-Layout Style With Body-Injected Technique for ESD Protection

標題:	High-Voltage nLDMOS in Waffle-Layout Style With Body-Injected Technique for ESD Protection
作者:	Chen, Wen-Yi Ker, Ming-Dou 電機學院 College of Electrical and Computer Engineering
關鍵字:	Bipolar CMOS DMOS (BCD) process;body-current injection;electrostatic discharge (ESD);lateral DMOS (LDMOS)
公開日期:	1-四月-2009
摘要:	Electrostatic-discharge robustness of n-channel lateral DMOS (nLDMOS) has been significantly Increased in this letter through the waffle-layout style with body-current Injection. This body-injected technique on high-voltage nLDMOS has been successfully verified in a 0.5-mu m 16-V bipolar CMOS DMOS process without additional process or mask modification. The TLP-measured results confirmed that the secondary breakdown current (I(t2)) of nLDMOS has a more than 2x increase by the body-current injection.
URI:	http://dx.doi.org/10.1109/LED.2009.2013368 http://hdl.handle.net/11536/7419
ISSN:	0741-3106
DOI:	10.1109/LED.2009.2013368
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	30
Issue:	4
起始頁:	389
結束頁:	391
顯示於類別：	期刊論文

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