完整後設資料紀錄
DC 欄位語言
dc.contributor.author郭明奇en_US
dc.contributor.authorKuo, Ming-Chien_US
dc.contributor.author趙昌博en_US
dc.contributor.authorChao, Chang-Poen_US
dc.date.accessioned2015-11-26T00:56:53Z-
dc.date.available2015-11-26T00:56:53Z-
dc.date.issued2015en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT079867516en_US
dc.identifier.urihttp://hdl.handle.net/11536/126751-
dc.language.isozh_TWen_US
dc.subject橫向雙擴散金氧半場效電晶體zh_TW
dc.subjectLDMOSen_US
dc.title0.18微米製程之低導通電阻700伏特橫向雙擴散場效電晶體設計zh_TW
dc.titleDesign of 700V LDMOSFET with Low Rds(on) in 0.18um Technologyen_US
dc.typeThesisen_US
dc.contributor.department電機學院電機與控制學程zh_TW
顯示於類別:畢業論文