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dc.contributor.authorLee, WNen_US
dc.contributor.authorChen, YFen_US
dc.contributor.authorHuang, JHen_US
dc.contributor.authorGuo, XJen_US
dc.contributor.authorKuo, CTen_US
dc.contributor.authorChin, TSen_US
dc.contributor.authorKu, HCen_US
dc.date.accessioned2014-12-08T15:17:34Z-
dc.date.available2014-12-08T15:17:34Z-
dc.date.issued2006-01-11en_US
dc.identifier.issn0953-8984en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0953-8984/18/1/L03en_US
dc.identifier.urihttp://hdl.handle.net/11536/12741-
dc.description.abstractA series of diluted magnetic semiconductors, (In0.52Al0.48)(1-x)MnxAs (0 < x <= 0. 11), was successfully grown on InP substrate by low-temperature molecular beam epitaxy. Our results indicate that (In0.52Al0.48)(1-x)MnxAs exhibits interesting magnetic behaviours at 5 K: it shows paramagnetic-like behaviour when x <= 0.05 and ferromagnetic behaviour when x >= 0.06.en_US
dc.language.isoen_USen_US
dc.title(In0.52Al0.48)(1-x)MnxAs muted magnetic semiconductor grown on InP substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0953-8984/18/1/L03en_US
dc.identifier.journalJOURNAL OF PHYSICS-CONDENSED MATTERen_US
dc.citation.volume18en_US
dc.citation.issue1en_US
dc.citation.spageL15en_US
dc.citation.epageL20en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000234866700004-
dc.citation.woscount0-
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