(In0.52Al0.48)(1-x)MnxAs muted magnetic semiconductor grown on InP substrates

Abstract

A series of diluted magnetic semiconductors, (In0.52Al0.48)(1-x)MnxAs (0 < x <= 0. 11), was successfully grown on InP substrate by low-temperature molecular beam epitaxy. Our results indicate that (In0.52Al0.48)(1-x)MnxAs exhibits interesting magnetic behaviours at 5 K: it shows paramagnetic-like behaviour when x <= 0.05 and ferromagnetic behaviour when x >= 0.06.