(In0.52Al0.48)(1-x)MnxAs muted magnetic semiconductor grown on InP substrates

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DC 欄位	值	語言
dc.contributor.author	Lee, WN	en_US
dc.contributor.author	Chen, YF	en_US
dc.contributor.author	Huang, JH	en_US
dc.contributor.author	Guo, XJ	en_US
dc.contributor.author	Kuo, CT	en_US
dc.contributor.author	Chin, TS	en_US
dc.contributor.author	Ku, HC	en_US
dc.date.accessioned	2014-12-08T15:17:34Z	-
dc.date.available	2014-12-08T15:17:34Z	-
dc.date.issued	2006-01-11	en_US
dc.identifier.issn	0953-8984	en_US
dc.identifier.uri	http://dx.doi.org/10.1088/0953-8984/18/1/L03	en_US
dc.identifier.uri	http://hdl.handle.net/11536/12741	-
dc.description.abstract	A series of diluted magnetic semiconductors, (In0.52Al0.48)(1-x)MnxAs (0 < x <= 0. 11), was successfully grown on InP substrate by low-temperature molecular beam epitaxy. Our results indicate that (In0.52Al0.48)(1-x)MnxAs exhibits interesting magnetic behaviours at 5 K: it shows paramagnetic-like behaviour when x <= 0.05 and ferromagnetic behaviour when x >= 0.06.	en_US
dc.language.iso	en_US	en_US
dc.title	(In0.52Al0.48)(1-x)MnxAs muted magnetic semiconductor grown on InP substrates	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1088/0953-8984/18/1/L03	en_US
dc.identifier.journal	JOURNAL OF PHYSICS-CONDENSED MATTER	en_US
dc.citation.volume	18	en_US
dc.citation.issue	1	en_US
dc.citation.spage	L15	en_US
dc.citation.epage	L20	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000234866700004	-
dc.citation.woscount	0	-
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