| 標題: | 運用介電層熔斷崩潰機制設計新穎的單次寫入唯讀記憶體 A One-Time-Programmable Array Based on a New Dielectric Fuse Breakdown Mechanism |
| 作者: | 黃智宏 Huang, Zhi-Hong 莊紹勳 Chung, Shao-Shiun 電子工程學系 電子研究所 |
| 關鍵字: | 單次寫入唯讀記憶體;互補式電晶體;熔斷;介電層崩潰;隨機電報雜訊;可靠度;OTP;CMOS;fuse;dielectric breakdown;RTN;Reliability |
| 公開日期: | 2015 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT070250150 http://hdl.handle.net/11536/127427 |
| 顯示於類別： | 畢業論文 |
- 利用介電層熔斷崩潰之電阻式記憶單元設計新穎的內嵌式可重寫單次寫入唯讀記憶體 / 程皓瑋;莊紹勳;Cheng, Hao-Wei;Zhuang, Shao-Xun
- The Demonstration of Low-cost and Logic Process Fully-Compatible OTP Memory on Advanced HKMG CMOS with a Newly found Dielectric Fuse Breakdown / Hsieh, E. R.;Huang, Z. H.;Chung, Steve S.;Ke, J. C.;Yang, C. W.
- The Advances of OTP Memory for Embedded Applications in HKMG Generation and Beyond / Chung, Steve S.
- The Demonstration of Gate Dielectric -fuse 4kb OTP Memory Feasible for Embedded Applications in High -k Metal-gate CMOS Generations and Beyond / Hsieh, E. R.;Chang, C. W.;Chuang, C. C.;Chen, H. W.;Chung, Steve S.
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