Memory effect of sol-gel derived V-doped SrZrO3 thin films

標題:	Memory effect of sol-gel derived V-doped SrZrO3 thin films
作者:	Liu, CY Chuang, CC Chen, JS Wang, A Jang, WY Young, JC Chiu, KY Tseng, TY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	SrZrO3;memory effect;nonvolatile memory;RRAM
公開日期:	3-一月-2006
摘要:	V-doped SrZrO3 (SZO) thin films on LaNiO3/SiO2/Si substrate are synthesized by sol-gel method to form metal-insulator-metal (MIM) sandwich structure. The physical and electrical properties of the MIM device are studied. The structure and surface morphology of the SZO films are also characterized by X-ray diffraction and scanning electron microscopy. Such a device has the bistable switching properties of current-voltage characteristics. The resistive switching between high state and low state can also be operated with voltage pulses. The device with the properties of long retention time and non-destructive readout is expected to be suitable for nonvolatile memory application. (c) 2005 Elsevier B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.tsf.2005.08.153 http://hdl.handle.net/11536/12748
ISSN:	0040-6090
DOI:	10.1016/j.tsf.2005.08.153
期刊:	THIN SOLID FILMS
Volume:	494
Issue:	1-2
起始頁:	287
結束頁:	290
顯示於類別：	會議論文

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