利用二階段成長法成長垂直式砷化銦奈米線在矽基版之研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	洪育智	en_US
dc.contributor.author	Hung,Yu-Chih	en_US
dc.contributor.author	張翼馬哲申	en_US
dc.contributor.author	Chang, Edward Yi Maa,Jershen	en_US
dc.date.accessioned	2015-11-26T01:02:57Z	-
dc.date.available	2015-11-26T01:02:57Z	-
dc.date.issued	2015	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#GT070258024	en_US
dc.identifier.uri	http://hdl.handle.net/11536/127780	-
dc.language.iso	en_US	en_US
dc.subject	三五族半導體砷化銦奈米線金屬有機化學氣象沉積	zh_TW
dc.subject	III-V semiconductor InAs Nanowire MOCVD	en_US
dc.title	利用二階段成長法成長垂直式砷化銦奈米線在矽基版之研究	zh_TW
dc.title	Investigation of Vertical InAs Nanowires Grown on Si (111) Substrate by Two-step Growth Technique	en_US
dc.type	Thesis	en_US
dc.contributor.department	光電系統研究所	zh_TW
顯示於類別：	畢業論文