Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM

doi:10.1016/j.mee.2015.04.091

標題:	Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM
作者:	Kruchinin, V. N. Aliev, V. Sh. PerevaIov, T. V. Islamov, D. R. Gritsenko, V. A. Prosvirin, I. P. Cheng, C. H. Chin, A. 交大名義發表 National Chiao Tung University
關鍵字:	Nanoscale fluctuations;Hafnium sub-oxides;Percolation;Resistive memory
公開日期:	1-Nov-2015
摘要:	We study the structure of non-stoichiometric HfOx films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry. HfOx, to a first approximation, is a mixture of HfO2 and Hf metal with a small amount (similar to 10-15%) of hafnium sub-oxides HfOy (y < 2). Spatial potential fluctuations, due to chemical compound fluctuations, lead to the percolation charge transport in such electronic systems. An application of these phenomena in resistive memory physics is discussed. (C) 2015 Elsevier B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.mee.2015.04.091 http://hdl.handle.net/11536/128214
ISSN:	0167-9317
DOI:	10.1016/j.mee.2015.04.091
期刊:	MICROELECTRONIC ENGINEERING
Volume:	147
起始頁:	165
結束頁:	167
Appears in Collections:	Articles