Local structure study of GeMn recrystallization process by helium ion beam-induced epitaxial crystallization

doi:10.1016/j.apsusc.2015.06.021

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, C. H.	en_US
dc.contributor.author	Niu, H.	en_US
dc.contributor.author	Lee, C. P.	en_US
dc.date.accessioned	2015-12-02T02:59:38Z	-
dc.date.available	2015-12-02T02:59:38Z	-
dc.date.issued	2015-11-01	en_US
dc.identifier.issn	0169-4332	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.apsusc.2015.06.021	en_US
dc.identifier.uri	http://hdl.handle.net/11536/128389	-
dc.description.abstract	In this study, GeMn thin films were fabricated by implantation of Mn ions at room temperature. Post-annealing was performed using 2 MeV of He+ ion irradiation. The recrystallization phenomena of the GeMn thin films were analyzed by Raman scattering. High-resolution transmission electron microscopy was also used to characterize the recrystallization process before and after ion beam annealing. A structure phase transition-like behavior of the recrystallization process of GeMn thin films was observed in the Raman spectra. (C) 2015 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	Raman scattering	en_US
dc.subject	TEM	en_US
dc.subject	Ion beam induced epitaxial crystallization	en_US
dc.subject	Ion beam material modification	en_US
dc.title	Local structure study of GeMn recrystallization process by helium ion beam-induced epitaxial crystallization	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.apsusc.2015.06.021	en_US
dc.identifier.journal	APPLIED SURFACE SCIENCE	en_US
dc.citation.volume	354	en_US
dc.citation.spage	120	en_US
dc.citation.epage	123	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000363672100023	en_US
dc.citation.woscount	0	en_US
顯示於類別：	期刊論文