標題: Local structure study of GeMn recrystallization process by helium ion beam-induced epitaxial crystallization
作者: Chen, C. H.
Niu, H.
Lee, C. P.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Raman scattering;TEM;Ion beam induced epitaxial crystallization;Ion beam material modification
公開日期: 1-十一月-2015
摘要: In this study, GeMn thin films were fabricated by implantation of Mn ions at room temperature. Post-annealing was performed using 2 MeV of He+ ion irradiation. The recrystallization phenomena of the GeMn thin films were analyzed by Raman scattering. High-resolution transmission electron microscopy was also used to characterize the recrystallization process before and after ion beam annealing. A structure phase transition-like behavior of the recrystallization process of GeMn thin films was observed in the Raman spectra. (C) 2015 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.apsusc.2015.06.021
http://hdl.handle.net/11536/128389
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2015.06.021
期刊: APPLIED SURFACE SCIENCE
Volume: 354
起始頁: 120
結束頁: 123
顯示於類別:期刊論文