標題: Anisotropic Structure Induced Electrical Properties of A-plane InN
作者: Chang, P. -H.
Chia, J. -W.
Gwo, S.
Ahn, H.
物理研究所
光電工程學系
Institute of Physics
Department of Photonics
公開日期: 1-Jan-2013
摘要: Terahertz spectroscopy reveals that the anisotropic electrical properties of nonpolar InN film along in-plane c-axis and in-plane m-axis are determined by the orientation of narrow and thin stacking faults, not by the density of defects.
URI: http://hdl.handle.net/11536/128488
ISBN: 978-1-55752-973-2
ISSN: 2160-9020
期刊: 2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
Appears in Collections:Conferences Paper