Long Photon Lifetime from Microdisk Cavity Laser with Type II GaSb/GaAs Quantum Dots

標題:	Long Photon Lifetime from Microdisk Cavity Laser with Type II GaSb/GaAs Quantum Dots
作者:	Hsu, K. S. Chang, C. C. Lin, W. H. Shih, M. H. Lin, S. Y. Chang, Y. C. 光電工程學系 Department of Photonics
公開日期:	1-Jan-2013
摘要:	Microdisk lasers with active region made of type II GaSb/GaAs quantum dots on the GaAs substrate have been demonstrated. Lasing wavelengths near 1 mu m was achieved and longer photon lifetime from type II structure also observed. (C) 2013 Optical Society of America
URI:	http://hdl.handle.net/11536/128498
ISBN:	978-1-55752-973-2
ISSN:	2160-9020
期刊:	2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
Appears in Collections:	Conferences Paper