標題: SEMICONDUCTOR DEVICE AND FORMATION THEREOF
作者: Chien Chao-Hsin
Chung Cheng-Ting
Chen Che-Wei
公開日期: 8-Oct-2015
摘要: A semiconductor device and methods of formation are provided. The semiconductor device includes a first metal alloy over a first active region of a fin and a second metal alloy over a second active region of the fin. A conductive layer is over a channel region of the fin. A semiconductive layer is over the conductive layer. The conductive layer over the channel region suppresses current leakage and the semiconductive layer over the conductive layer reduces electro flux from a source to a drain, as compared to a channel region that does not have such a conductive layer or a semiconductive layer over a conductive layer. The semiconductor device having the first metal alloy as at least one of the source or drain requires a lower activation temperature than a semiconductor device that does not have a metal alloy as a source or a drain.
官方說明文件#: H01L029/78
H01L029/45
H01L029/51
H01L029/49
H01L021/285
H01L029/16
H01L029/417
H01L029/423
H01L021/02
H01L029/66
H01L029/06
URI: http://hdl.handle.net/11536/128695
專利國: USA
專利號碼: 20150287819
Appears in Collections:Patents


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