標題: Charge-trap non-volatile memories fabricated by laser-enabled low-thermal budget processes
作者: Huang, Wen-Hsien
Shieh, Jia-Min
Pan, Fu-Ming
Yang, Chih-Chao
Shen, Chang-Hong
Wang, Hsing-Hsiang
Hsieh, Tung-Ying
Wu, Ssu-Yu
Wu, Meng-Chyi
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2-十一月-2015
摘要: We fabricated charge-trap non-volatile memories (NVMs) using low thermal budget processes, including laser-crystallization of poly-Si thin film, chemical vapor deposition deposition of a stacked memory layer, and far-infrared-laser dopant activation. The thin poly-Si channel has a low defect-density at the interface with the bulk, resulting in a steep subthreshold swing for the NVM transistors. The introduction of the stacked SiO2/AlOxNy tunnel layer and the SiNx charge-trap layer with a gradient bandgap leads to reliable retention and endurance at low voltage for the NVMs. The low thermal budget processes are desirable for the integration of the nano-scaled NVMs into system on panels. (C) 2015 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4935224
http://hdl.handle.net/11536/129389
ISSN: 0003-6951
DOI: 10.1063/1.4935224
期刊: APPLIED PHYSICS LETTERS
Volume: 107
Issue: 18
顯示於類別:期刊論文