標題: | Charge-trap non-volatile memories fabricated by laser-enabled low-thermal budget processes |
作者: | Huang, Wen-Hsien Shieh, Jia-Min Pan, Fu-Ming Yang, Chih-Chao Shen, Chang-Hong Wang, Hsing-Hsiang Hsieh, Tung-Ying Wu, Ssu-Yu Wu, Meng-Chyi 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2-十一月-2015 |
摘要: | We fabricated charge-trap non-volatile memories (NVMs) using low thermal budget processes, including laser-crystallization of poly-Si thin film, chemical vapor deposition deposition of a stacked memory layer, and far-infrared-laser dopant activation. The thin poly-Si channel has a low defect-density at the interface with the bulk, resulting in a steep subthreshold swing for the NVM transistors. The introduction of the stacked SiO2/AlOxNy tunnel layer and the SiNx charge-trap layer with a gradient bandgap leads to reliable retention and endurance at low voltage for the NVMs. The low thermal budget processes are desirable for the integration of the nano-scaled NVMs into system on panels. (C) 2015 AIP Publishing LLC. |
URI: | http://dx.doi.org/10.1063/1.4935224 http://hdl.handle.net/11536/129389 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.4935224 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 107 |
Issue: | 18 |
顯示於類別: | 期刊論文 |