Junction-less poly-Ge FinFET and charge-trap NVM fabricated by laser-enabled low thermal budget processes

Abstract

A doping-free poly-Ge film as channel material was implemented by CVD-deposited nano-crystalline Ge and visible-light laser crystallization, which behaves as a p-type semiconductor, exhibiting holes concentration of 1.8 x 10(18) cm(-3) and high crystallinity (Raman FWHM similar to 4.54 cm(-1)). The fabricated junctionless 7 nm-poly-Ge FinFET performs at an I-on/I-off ratio over 10(5) and drain-induced barrier lowering of 168mV/ V. Moreover, the fast programming speed of 100 mu s-1 ms and reliable retention can be obtained from the junctionless poly-Ge nonvolatile-memory. Such junctionless poly-Ge devices with low thermal budget are compatible with the conventional CMOS technology and are favorable for 3D sequential-layer integration and flexible electronics. Published by AIP Publishing.