標題: Enabling n-type polycrystalline Ge junctionless FinFET of low thermal budget by in situ doping of channel and visible pulsed laser annealing
作者: Huang, Wen-Hsien
Shieh, Jia-Min
Kao, Ming-Hsuan
Shen, Chang-Hong
Huang, Tzu-En
Wang, Hsing-Hsiang
Yang, Chih-Chao
Hsieh, Tung-Ying
Hsieh, Jin-Long
Yu, Peichen
Yeh, Wen-Kuan
光電工程學系
Department of Photonics
公開日期: 二月-2017
摘要: A low-thermal-budget n-type polycrystalline Ge (poly-Ge) channel that was prepared by plasma in-situ-doped nanocrystalline Ge (nc-Ge) and visible pulsed laser annealing exhibits a high electrically active concentration of 2 x 10(19) cm(-3) and a narrow Raman FWHM of 3.9 cm(-1). Furthermore, the fabricated n-type poly-Ge junctionless FinFET (JL-FinFET) shows an I-on/I-off ratio of 6 x 10(4), V-th of % -0.3 V, and a subthreshold swing of 237mV/dec at V-d of 1V and DIBL of 101mV/V. The poly-Ge JL-FinFET with a high-aspect-ratio fin channel is less sensitive to V-th roll-off and subthreshold-swing degradation as the gate length is scaled down to 50 nm. This low-thermal-budget JL-FinFET can be integrated into three-dimensional sequential-layer integration and flexible electronics. (C) 2017 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/APEX.10.026502
http://hdl.handle.net/11536/133177
ISSN: 1882-0778
DOI: 10.7567/APEX.10.026502
期刊: APPLIED PHYSICS EXPRESS
Volume: 10
Issue: 2
顯示於類別:期刊論文