標題: | Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel |
作者: | Lin, Yu-Hsien Tsai, Yi-He Hsu, Chung-Chun Luo, Guang-Li Lee, Yao-Jen Chien, Chao-Hsin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | germanium;microwave annealing;NiSiGe;Schottky junction |
公開日期: | 1-Nov-2015 |
摘要: | In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si0.57Ge0.43/Si) through microwave annealing (MWA) ranging from 200 to 470 degrees C for 150 s in N-2 ambient. MWA has the advantage of being diffusion-less during activation, having a low-temperature process, have a lower junction leakage current, and having low sheet resistance (Rs) and contact resistivity. In our study, a 20 nm NiSiGe Schottky junction was formed by TEM and XRD analysis at MWA 390 degrees C. The NiSiGe/n-Si Schottky junction exhibits the highest forward/reverse current (I-ON/I-OFF) ratio of similar to 3 x 10(5). The low temperature MWA is a very promising thermal process technology for NiSiGe Schottky junction manufacturing. |
URI: | http://dx.doi.org/10.3390/ma8115403 http://hdl.handle.net/11536/129393 |
ISSN: | 1996-1944 |
DOI: | 10.3390/ma8115403 |
期刊: | MATERIALS |
Volume: | 8 |
Issue: | 11 |
起始頁: | 7519 |
結束頁: | 7523 |
Appears in Collections: | Articles |
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