標題: Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel
作者: Lin, Yu-Hsien
Tsai, Yi-He
Hsu, Chung-Chun
Luo, Guang-Li
Lee, Yao-Jen
Chien, Chao-Hsin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: germanium;microwave annealing;NiSiGe;Schottky junction
公開日期: 1-Nov-2015
摘要: In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si0.57Ge0.43/Si) through microwave annealing (MWA) ranging from 200 to 470 degrees C for 150 s in N-2 ambient. MWA has the advantage of being diffusion-less during activation, having a low-temperature process, have a lower junction leakage current, and having low sheet resistance (Rs) and contact resistivity. In our study, a 20 nm NiSiGe Schottky junction was formed by TEM and XRD analysis at MWA 390 degrees C. The NiSiGe/n-Si Schottky junction exhibits the highest forward/reverse current (I-ON/I-OFF) ratio of similar to 3 x 10(5). The low temperature MWA is a very promising thermal process technology for NiSiGe Schottky junction manufacturing.
URI: http://dx.doi.org/10.3390/ma8115403
http://hdl.handle.net/11536/129393
ISSN: 1996-1944
DOI: 10.3390/ma8115403
期刊: MATERIALS
Volume: 8
Issue: 11
起始頁: 7519
結束頁: 7523
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