標題: The influences of contact interfaces between the indium tin oxide-based contact layer and GaN-based LEDs
作者: Hsu, CY
Lan, WH
Wu, YCS
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2006
摘要: We have fabricated GaN-based light-emitting diodes (LEDs) using transparent indium tin oxide-based (ITO-based) p contacts. The current-voltage characteristics and life tests of GaN-based LEDs have been studied. LED life tests showed that a pure ITO contact layer had poor reliability at high current stress. We also found that the GaN-based LED could achieve good reliability with a NiO/ITO contact layer. Using transmission electron microscopy and energy-dispersive X-ray spectrometer analyses, we observed In-contained metallic interface between the p-GaN layer and the pure ITO contact layer after annealing at 600 degrees C. It revealed that ITO would react at interface or indiffuse near the interface at 600 C. The LED was degraded with unstable interfaces after life tests (stressed by a 50-mA current injection). To improve the reliability of GaN-based LEDs with the ITO contact layer, we suggest that the NiO layer be used to prevent the reaction and block the leakage pathway. (c) 2006 The Electrochemical Society.
URI: http://hdl.handle.net/11536/12940
http://dx.doi.org/10.1149/1.2184071
ISSN: 0013-4651
DOI: 10.1149/1.2184071
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 153
Issue: 5
起始頁: G475
結束頁: G478
顯示於類別:期刊論文


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