Fabricating a n(+)-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal (vol 107, 113503, 2015)

doi:10.1063/1.4937124

標題:	Fabricating a n(+)-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal (vol 107, 113503, 2015)
作者:	Hsu, C. C. Chou, C. H. Wang, S. Y. Chi, W. C. Chien, C. H. Luo, G. L. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	7-Dec-2015
摘要:
URI:	http://dx.doi.org/10.1063/1.4937124 http://hdl.handle.net/11536/129540
ISSN:	0003-6951
DOI:	10.1063/1.4937124
期刊:	APPLIED PHYSICS LETTERS
Volume:	107
Issue:	23
Appears in Collections:	Articles