Polymer hot-carrier transistor

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DC 欄位	值	語言
dc.contributor.author	Chao, YC	en_US
dc.contributor.author	Yang, SL	en_US
dc.contributor.author	Meng, HF	en_US
dc.contributor.author	Horng, SF	en_US
dc.date.accessioned	2014-12-08T15:17:52Z	-
dc.date.available	2014-12-08T15:17:52Z	-
dc.date.issued	2005-12-19	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2149219	en_US
dc.identifier.uri	http://hdl.handle.net/11536/12957	-
dc.description.abstract	Metal-base hot-carrier transistor with conjugated polymer emitter and collector is demonstrated. The device is fabricated by multiple spin coating with the metal base sandwiched between two polymers. A thin insulating layer of LiF is inserted between the emitter and base to enhance the hot carrier kinetic energy and reduce mutual dissolution. Using poly(9-vinylcarbazole) as the emitter, Al as the base, and poly(3-hexylthiophene) as the collector, common-emitter current gain of 25 is obtained with operation voltage as low as 5 V.	en_US
dc.language.iso	en_US	en_US
dc.title	Polymer hot-carrier transistor	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2149219	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	87	en_US
dc.citation.issue	25	en_US
dc.citation.epage		en_US
dc.contributor.department	物理研究所	zh_TW
dc.contributor.department	Institute of Physics	en_US
dc.identifier.wosnumber	WOS:000234118900100	-
dc.citation.woscount	24	-
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