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dc.contributor.authorLin, Chun-Yuen_US
dc.contributor.authorChiu, Yan-Lianen_US
dc.date.accessioned2016-03-28T00:05:42Z-
dc.date.available2016-03-28T00:05:42Z-
dc.date.issued2015-11-01en_US
dc.identifier.issn0026-2714en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.microrel.2015.02.020en_US
dc.identifier.urihttp://hdl.handle.net/11536/129777-
dc.description.abstractIn these decades, integrated circuits for biomedical electronics applications have been designed and implemented in CMOS technologies. In order to be safely used by human, all microelectronic products must meet the reliability specifications. Therefore, electrostatic discharge (ESD) must be taken into consideration. To protect the biomedical integrated circuits in CMOS technologies from ESD damage, a dual-directional silicon-controlled rectifier (DDSCR) device was presented in this work. Experimental results show that the DDSCR has the advantages of high ESD robustness, low leakage, large swing tolerance, and good latchup immunity. The DDSCR was suitable for ESD protection in biomedical integrated circuits. (C) 2015 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectBiomedicalen_US
dc.subjectCMOSen_US
dc.subjectElectrostatic discharge (ESD)en_US
dc.subjectSilicon-controlled rectifier (SCR)en_US
dc.titleInvestigation on SCR-based ESD protection device for biomedical integrated circuits in a 0.18-mu m CMOS processen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.microrel.2015.02.020en_US
dc.identifier.journalMICROELECTRONICS RELIABILITYen_US
dc.citation.volume55en_US
dc.citation.issue11en_US
dc.citation.spage2229en_US
dc.citation.epage2235en_US
dc.contributor.department生醫電子轉譯研究中心zh_TW
dc.contributor.departmentBiomedical Electronics Translational Research Centeren_US
dc.identifier.wosnumberWOS:000367282100012en_US
dc.citation.woscount0en_US
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