標題: Reliability Improvement of HfO(2)/SiON Gate Stacked nMOSFET using Fluorinated Silicate Glass Passivation Layer
作者: Hsieh, Chih-Ren
Chen, Yung-Yu
Chung, Jer-Fu
Lou, Jen-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: fluorine;FSG;HfO(2)
公開日期: 1-Jan-2009
摘要: In this paper, the reliability of the fluorinated hafnium oxide (HfO(2)) gate dielectric using novel and CMOS compatible fluorinated silicate glass (FSG) process has been studied comprehensively for the first time. Due to dangling bonds and oxygen vacancies recovery by the fluorine atoms, higher transconductance, smaller stress-induced threshold voltage and interface state degradation are therefore obtained for the fluorinated HfO(2)/SiON gate stack.
URI: http://hdl.handle.net/11536/12978
ISBN: 978-1-4244-4297-3
ISSN: 
期刊: 2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009)
Volume: 
Issue: 
起始頁: 240
結束頁: 242
Appears in Collections:Conferences Paper