A 45nm 6b/cell Charge-Trapping Flash Memory Using LDPC-Based ECC and Drift-Immune Soft-Sensing Engine

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Ho, Kin-Chu	en_US
dc.contributor.author	Fang, Po-Chao	en_US
dc.contributor.author	Li, Hsiang-Pang	en_US
dc.contributor.author	Wang, Cheng-Yuan Michael	en_US
dc.contributor.author	Chang, Hsie-Chia	en_US
dc.date.accessioned	2016-03-28T00:05:45Z	-
dc.date.available	2016-03-28T00:05:45Z	-
dc.date.issued	2013-01-01	en_US
dc.identifier.isbn	978-1-4673-4513-2; 978-1-4673-4515-6	en_US
dc.identifier.issn	0193-6530	en_US
dc.identifier.uri	http://hdl.handle.net/11536/129819	-
dc.description.abstract		en_US
dc.language.iso	en_US	en_US
dc.title	A 45nm 6b/cell Charge-Trapping Flash Memory Using LDPC-Based ECC and Drift-Immune Soft-Sensing Engine	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2013 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS (ISSCC)	en_US
dc.citation.volume	56	en_US
dc.citation.spage	222	en_US
dc.citation.epage	U1056	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.identifier.wosnumber	WOS:000366612300091	en_US
dc.citation.woscount	1	en_US
顯示於類別：	會議論文