下世代單一電晶體動態隨機存取記憶體

Full metadata record

DC Field	Value	Language
dc.contributor.author	荊鳳德	zh_TW
dc.contributor.author	CHIN ALBERT	en_US
dc.date.accessioned	2016-03-29T00:01:13Z	-
dc.date.available	2016-03-29T00:01:13Z	-
dc.date.issued	2016	en_US
dc.identifier.govdoc	MOST103-2221-E009-178-MY3	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/130923	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=11724408&docId=480235	en_US
dc.description.sponsorship	科技部	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	下世代單一電晶體動態隨機存取記憶體	zh_TW
dc.title	Next Generation One-Transistor DRAM	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系及電子研究所	zh_TW
Appears in Collections:	Research Plans