標題: Fabrication of narrow-band self-filtering GaAs photodetector by epitaxy
作者: Shie, JS
Hwang, TSD
光電工程學系
Department of Photonics
公開日期: 1-Nov-2005
摘要: A narrow-band self-filtering (NBSF) GaAs photodiode has been fabricated by the LPE technique, where epilayers of high-low-high N doping were grown on a P-type substrate. By proper control of the thickness and doping concentration of each layer, it can be demonstrated that the fabricated NBSF detector has a spectral bandwidth as narrow as 315 angstrom at 880 nm peak wavelength. This means over 98% of the blue-side light is suppressible, indicating that the NBSF photodetector is a useful device for many applications where the suppression of high background light is necessary. (c) 2005 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2133996
http://hdl.handle.net/11536/13136
ISSN: 0034-6748
DOI: 10.1063/1.2133996
期刊: REVIEW OF SCIENTIFIC INSTRUMENTS
Volume: 76
Issue: 11
結束頁: 
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