標題: | Electronic transport properties of alpha-TiAl alloys |
作者: | Zhang, DL Liu, SM Jing, XN Luo, JL Zhang, XG Wang, RJ Kang, N Chen, ZJ Lu, L Lin, JJ 電子物理學系 物理研究所 Department of Electrophysics Institute of Physics |
關鍵字: | electronic transport;resistivity saturation;separation of electron and phonon thermal conductivity |
公開日期: | 10-十月-2005 |
摘要: | The electrical resistivity, thermal conductivity, and thermopower of alpha-TiAl alloy samples with A1 content from 0 at.% to 10 at.% are measured from room temperature down to liquid helium temperature. It is found that with the increase in A1 content the single phonon scattering contribution to the resistivity remains nearly constant, but the multiphonon scattering contribution monotonously increases. This provides an alternative explanation of resistivity saturation to the shunt-resistor model. The Wiedemann-Ranz law holds for the whole temperature range, allowing the separation of the electron and phonon contributions to the thermal conductivity. The data from samples with different doping levels enable us to separate the band and the scattering terms in the thermopower. |
URI: | http://dx.doi.org/10.1142/S0217979205032450 http://hdl.handle.net/11536/13168 |
ISSN: | 0217-9792 |
DOI: | 10.1142/S0217979205032450 |
期刊: | INTERNATIONAL JOURNAL OF MODERN PHYSICS B |
Volume: | 19 |
Issue: | 25 |
起始頁: | 3869 |
結束頁: | 3895 |
顯示於類別: | 期刊論文 |