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dc.contributor.authorCho, MHen_US
dc.contributor.authorHuang, GWen_US
dc.contributor.authorWang, YHen_US
dc.contributor.authorWu, LKen_US
dc.date.accessioned2014-12-08T15:18:20Z-
dc.date.available2014-12-08T15:18:20Z-
dc.date.issued2005-10-01en_US
dc.identifier.issn1531-1309en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LMWC.2005.856685en_US
dc.identifier.urihttp://hdl.handle.net/11536/13225-
dc.description.abstractIn this letter, we present a scalable and efficient noise de-embedding procedure, which is based on transmission-line theory and cascade configurations, for on-wafer microwave measurements of silicon MOSFETs. The proposed de-embedding procedure utilizes one open and one thru dummy structures to eliminate the parasitic effects from the probe pads and the input/output interconnects of a device-under-test (DUT), respectively. This method can generate the scalable distributed interconnect parameters to efficiently and precisely remove the redundant parasitics of the DUTs with various device sizes and arbitrary interconnect dimensions.en_US
dc.language.isoen_USen_US
dc.subjectcalibrationen_US
dc.subjectde-embeddingen_US
dc.subjectMOSFETen_US
dc.subjectnoiseen_US
dc.subjectS-parametersen_US
dc.titleA scalable noise de-embedding technique for on-wafer microwave device characterizationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LMWC.2005.856685en_US
dc.identifier.journalIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERSen_US
dc.citation.volume15en_US
dc.citation.issue10en_US
dc.citation.spage649en_US
dc.citation.epage651en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000232236000015-
dc.citation.woscount17-
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