標題: A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient
作者: Tseng, Yuan-Hung
Wu, Tsung-Han
Tsui, Bing-Yue
Yen, Cheng-Tyng
Hung, Chien-Chung
Lee, Chwan-Ying
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: Apr-2017
摘要: The oxidation mechanism of 4H-SiC in diluted N2O ambient was studied at various temperatures, N2O flow rates, and N-2/N2O flow ratios. The collision partner, N-2 in this study, plays crucial roles in determining the oxidation rate and N-incorporation. According to the proposed oxidation mechanism, lowering the interface state density at lower oxidation temperatures is possible with a high-efficiency collision partner. (C) 2017 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.56.04CR02
http://hdl.handle.net/11536/133131
ISSN: 0021-4922
DOI: 10.7567/JJAP.56.04CR02
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 56
Issue: 4
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