標題: | Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels |
作者: | Wu, YC Chang, TC Liu, PT Chou, CW Wu, YC Tu, CH Chang, CY 電子工程學系及電子研究所 光電工程學系 顯示科技研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display |
關鍵字: | dual-gate;metal-induced lateral crystallization (MILC);nanowire;thin-film transistor (TFT) |
公開日期: | 1-Sep-2005 |
摘要: | This letter addresses the leakage current in nickel (Ni) metal-induced lateral crystallization (Ni-MILC) polysilicon thin-film transistors (poly-Si TFTs) with multiple nanowire channels and dual-gate. Experimental results reveal that applying multiple nanowire channels improves the Ni-MILC poly-Si TFT performance. However, the leakage current of both single-gate with single-channel and multiple nanowire channels remains high (> 10(-8) A), because of the field emission of carriers through the poly-Si grain traps and the defects caused by Ni contamination. Applying the dual-gate structure can suppress the electrical filed in the drain depletion region, significantly reducing the leakage current of the Ni-MILC poly-Si TFT, increasing the ON/OFF ratio. |
URI: | http://dx.doi.org/10.1109/LED.2005.854382 http://hdl.handle.net/11536/13324 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2005.854382 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 26 |
Issue: | 9 |
起始頁: | 646 |
結束頁: | 648 |
Appears in Collections: | Articles |
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