標題: A stochastic simulation method for the assessment of resistive random access memory retention reliability
作者: Berco, Dan
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 21-Dec-2015
摘要: This study presents an evaluation method for resistive random access memory retention reliability based on the Metropolis Monte Carlo algorithm and Gibbs free energy. The method, which does not rely on a time evolution, provides an extremely efficient way to compare the relative retention properties of metal-insulator-metal structures. It requires a small number of iterations and may be used for statistical analysis. The presented approach is used to compare the relative robustness of a single layer ZrO2 device with a double layer ZnO/ZrO2 one, and obtain results which are in good agreement with experimental data. (C) 2015 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4938210
http://hdl.handle.net/11536/133525
ISSN: 0003-6951
DOI: 10.1063/1.4938210
期刊: APPLIED PHYSICS LETTERS
Volume: 107
Issue: 25
Appears in Collections:Articles