標題: 32-nm Multigate Si-nTFET With Microwave-Annealed Abrupt Junction
作者: Hou, Fu-Ju
Sung, Po-Jung
Hsueh, Fu-Kuo
Wu, Chien-Ting
Lee, Yao-Jen
Chang, Mao-Nang
Li, Yiming
Hou, Tuo-Hung
電機學院
電子工程學系及電子研究所
College of Electrical and Computer Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: Microwave annealing (MWA);solid-phase epitaxial regrowth (SPER);tunnel FET (TFET)
公開日期: May-2016
摘要: Microwave annealing (MWA) activates dopants through solid-phase epitaxial regrowth with low thermal budget. Optimizing the microwave power during MWA is capable of realizing low defect density at the junction, suppressing the dopant diffusion, and mitigating the straggle effect of ion implantation. These favorable features of MWA facilitate the formation of extremely abrupt junction profiles in tunnel FETs (TFETs). In conjunction with the improved gate-to-channel controllability of the multiple-gate (MG) structure, we demonstrate high-performance lateral n-type Si-TFETs using a CMOS-compatible process flow with excellent band-to-band tunneling efficiency and device scalability. The 32-nm MG Si-TFET shows promising characteristics, including a high ON-state current of 41.3 mu A/mu m, a large current ON/OFF ratio of > 5 x 10(7), and minimal short-channel effect using V-G = 2 V and V-D = 1 V.
URI: http://dx.doi.org/10.1109/TED.2015.2466236
http://hdl.handle.net/11536/133638
ISSN: 0018-9383
DOI: 10.1109/TED.2015.2466236
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 63
Issue: 5
起始頁: 1808
結束頁: 1813
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