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dc.contributor.authorLin, Cheng-Ien_US
dc.contributor.authorKhan, Asif Islamen_US
dc.contributor.authorSalahuddin, Sayeefen_US
dc.contributor.authorHu, Chenmingen_US
dc.date.accessioned2017-04-21T06:55:35Z-
dc.date.available2017-04-21T06:55:35Z-
dc.date.issued2016-05en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2016.2514783en_US
dc.identifier.urihttp://hdl.handle.net/11536/133640-
dc.description.abstractWe study the effects of the variation of ferroelectric material properties (thickness, polarization, and coercivity) on the performance of negative capacitance FETs (NCFETs). Based on this, we propose the concept of conservative design of NCFETs, where any unintentional yet reasonable and simultaneous variation (similar to +/- 3%) in ferroelectric parameters does not result in the emergence of hysteresis and causes only a reasonable variation in the ON-current (<= 5%) and, within these constraints, the enhancement of ON-current due to the addition of the ferroelectric gate oxide, which is is maximized.en_US
dc.language.isoen_USen_US
dc.subjectFerroelectricen_US
dc.subjectnegative capacitance FET (NCFET)en_US
dc.subjectsub-60 mV/decadeen_US
dc.titleEffects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristicsen_US
dc.identifier.doi10.1109/TED.2016.2514783en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume63en_US
dc.citation.issue5en_US
dc.citation.spage2197en_US
dc.citation.epage2199en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000375004500059en_US
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